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GaAs FET
CLY 2
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Datasheet
* Power amplifier for mobile phones * For frequencies up to 3 GHz * Operating voltage range: 2 to 6 V * POUT at VD=3V, f=1.8GHz typ. 23.5 dBm * High efficiency better 55 %
4 5 6
3 2
ESD:
Electrostatic discharge sensitive device, observe handling precautions!
1
Type
Marking
Ordering code (taped) Q62702-L96
.
1
2 S
Pin Configuration 3 4 5 D D S
Package 1) 6 G MW 6
CLY 2
Y2
G
Maximum ratings Drain-source voltage Drain-gate voltage Gate-source voltage Drain current Channel temperature Storage temperature Total power dissipation (TS < 50C) 2) Thermal Resistance Channel-soldering point 2)
Symbol VDS VDG VGS ID TCh Tstg Ptot 9 12 -6 600 150 -55...+150 900
Unit V V V mA C C mW
RthChS
110
K/W
1) Dimensions see chapter Package Outlines 2) TS is measured on the source lead at the soldering point to the pcb.
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pg. 1/77
17.12.96 HL EH PD 21
GaAs FET
Electrical characteristics (TA = 25C , unless otherwise specified) Characteristics Drain-source saturation current
VDS = 3 V VGS = 0 V
CLY 2
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Symbol
min 300 -3.8 -
typ 450 5 5 -2.8 15.5
max 650 50 20 -1.8 -
Unit mA A A V dB
IDSS ID(p) IG(p) VGS(p)
Drain-source pinch-off current
VDS = 3 V VGS = -3.8 V
Gate pinch-off current
VDS = 3 V VGS = -3.8 V
Pinch-off Voltage
VDS = 3 V ID = 50 A
*
Small Signal Gain )
VDS = 3 V ID = 180 mA Pin = -5 dBm
f = 1.8 GHz
G
Small Signal Gain **)
VDS = 3 V ID = 180 mA Pin = -5 dBm
f = 1.8 GHz
G
-
14.5
-
dB
Output Power
VDS = 3V Pin = 10 dBm
Po
22.5
23.5
dBm
ID = 180 mA f = 1.8 GHz
1dB-Compression Point
VDS = 3 V ID = 180 mA
f = 1.8 GHz
P1dB
-
23.5
-
dBm
1dB-Compression Point
VDS = 5 V ID = 180 mA
f = 1.8 GHz
P1dB
-
27.0
-
dBm
Power Added Efficiency
VDS = 3V Pin = 10 dBm
*
PAE
f = 1.8 GHz
-
55
-
%
ID = 180mA
) Matching conditions for maximum small signal gain ( not identical with power
matching conditions ! )
**
) Power matching conditions: f = 1.8 GHz
Source Match: ms: MAG = 0.74, ANG 132; Load Match: ml: ;MAG 0.61, ANG -153 pg. 2/77 17.12.96 HL EH PD 21
Siemens Aktiengesellschaft
GaAs FET
CLY 2
________________________________________________________________________________________________________
Output Characteristics
0,5 0,45 0,4 0,35 0,3 0,25 0,2 0,15 0,1 0,05 0 0 1
PtotDC VGS=0V VGS=-0.5V VGS=-1V VGS=-1.5V VGS=-2V VGS=-2.5V
Draincurrent [A]
2
3
4
5
6
7
Drain-Source Voltage [V]
Compression Power vs. Drain-Source Voltage
f = 1.8GHz; ID = 0.5IDSS
P1dB 40 [dBm] 35 30 25 20 15 10 5 0 0 1 2 3 4 5 [V] 6
Dra in-Source Voltage
D
80 [%] 70 60 50 40 30 20 10 0
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pg. 3/77
17.12.96 HL EH PD 21
GaAs FET
CLY 2
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typ. Common Source S-Parameters VDS = 3 V ID = 180 mA Zo = 50
f GHZ S11 MAG ANG 0.99 0.99 0.98 0.97 0.96 0.94 0.92 0.89 0.86 0.84 0.82 0.80 0.77 0.74 0.73 0.72 0.72 0.71 0.71 0.71 0.71 0.72 0.74 0.76 0.78 0.79 0.80 0.83 -12.0 -17.9 -23.7 -29.5 -35.1 -46.0 -56.4 -66.2 -75.4 -84.1 -92.1 -99.7 -113.6 -125.9 -131.5 -137.1 -147.4 -157.2 -165.3 -173.3 -177.4 165.7 151.7 139.9 127.4 116.7 106.3 97.1 S21 MAG ANG 9.17 9.11 9.01 8.89 8.75 8.40 8.03 7.61 7.22 6.82 6.45 6.10 5.45 4.92 4.71 4.48 4.10 3.77 3.47 3.19 3.06 2.52 2.12 1.85 1.61 1.43 1.23 1.06 171.6 167.4 163.4 159.3 155.4 147.8 140.7 134.1 128.0 122.3 117.2 112.3 103.6 95.8 92.1 88.5 81.7 75.0 68.8 63.0 60.1 47.2 36.4 26.5 15.3 4.6 -5.9 -14.8 S12 MAG ANG 0.007 0.011 0.014 0.017 0.021 0.026 0.031 0.036 0.039 0.043 0.045 0.048 0.052 0.055 0.056 0.057 0.059 0.060 0.062 0.063 0.063 0.065 0.066 0.073 0.078 0.085 0.085 0.087 83.3 80.8 77.6 74.7 72.4 67.0 62.5 58.0 54.4 51.2 48.3 46.1 41.8 38.6 37.2 36.2 34.0 31.9 31.2 29.7 28.9 28.4 29.7 30.6 28.2 24.0 20.9 17.7 S22 MAG ANG 0.15 0.16 0.16 0.16 0.16 0.17 0.18 0.18 0.19 0.20 0.20 0.21 0.22 0.23 0.23 0.24 0.25 0.26 0.27 0.29 0.29 0.32 0.36 0.39 0.42 0.45 0.49 0.52 -16.6 -24.2 -31.2 -39.0 -45.9 -58.2 -69.2 -79.0 -87.0 -94.2 -100.4 -105.3 -115.1 -122.9 -125.7 -129.4 -135.0 -139.7 -143.0 -147.2 -150.0 -159.7 -167.5 -173.1 179.2 174.3 167.8 160.9
0.100 0.150 0.200 0.250 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 1.200 1.400 1.500 1.600 1.800 2.000 2.200 2.400 2.500 3.000 3.500 4.000 4.500 5.000 5.500 6.000
Additional S-Parameter available on CD
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17.12.96 HL EH PD 21
GaAs FET
CLY 2
________________________________________________________________________________________________________
typ. Common Source S-Parameters VDS = 5 V ID = 180 mA Zo = 50
f GHZ S11 MAG ANG 0.99 0.99 0.98 0.97 0.96 0.94 0.91 0.89 0.86 0.84 0.81 0.80 0.76 0.74 0.73 0.72 0.72 0.71 0.71 0.71 0.71 0.73 0.75 0.77 0.78 0.79 0.81 0.84 -12.3 -18.4 -24.3 -30.3 -36.1 -47.2 -57.8 -67.8 -77.1 -85.9 -93.9 -101.5 -115.4 -127.6 -133.2 -138.8 -149.0 -158.6 -166.6 -174.5 -178.5 164.9 151.1 139.4 126.9 116.1 105.6 96.3 S21 MAG ANG 9.30 9.23 9.13 9.00 8.85 8.48 8.08 7.64 7.23 6.81 6.43 6.07 5.40 4.87 4.65 4.42 4.04 3.71 3.41 3.13 3.00 2.47 2.07 1.80 1.56 1.37 1.18 1.00 171.3 166.9 162.8 158.5 154.6 146.7 139.4 132.6 126.3 120.6 115.3 110.4 101.4 93.6 89.8 86.1 79.2 72.3 66.1 60.1 57.1 43.9 32.5 22.1 10.5 -0.6 -11.6 -20.8 S12 MAG ANG 0.007 0.010 0.014 0.017 0.020 0.026 0.030 0.034 0.038 0.041 0.043 0.045 0.048 0.051 0.052 0.052 0.054 0.054 0.055 0.056 0.056 0.057 0.059 0.067 0.074 0.082 0.083 0.086 83.1 80.0 77.2 73.6 71.1 65.8 61.0 56.3 52.8 49.5 46.4 44.2 40.1 36.9 35.6 34.6 32.7 30.9 30.9 29.9 29.4 30.8 34.3 36.7 34.7 30.2 26.7 22.9 S22 MAG 0.27 0.27 0.26 0.26 0.26 0.26 0.25 0.25 0.25 0.24 0.24 0.24 0.24 0.24 0.24 0.24 0.25 0.26 0.27 0.28 0.29 0.32 0.35 0.40 0.43 0.47 0.51 0.54 ANG -10.8 -15.8 -20.4 -25.7 -30.5 -39.2 -47.7 -55.4 -62.2 -68.6 -74.1 -79.2 -88.8 -96.8 -100.2 -103.9 -110.4 -116.2 -120.4 -125.6 -129.1 -140.6 -150.6 -158.2 -167.6 -174 178 169.6
0.100 0.150 0.200 0.250 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 1.200 1.400 1.500 1.600 1.800 2.000 2.200 2.400 2.500 3.000 3.500 4.000 4.500 5.000 5.500 6.000
Additional S-Parameter available on CD
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17.12.96 HL EH PD 21
GaAs FET
Total Power Dissipation
Ptot = f(Ts)
CLY 2
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1.0
[W]
0.8
0.6 0.4
0.2
0 0 50 100
O
C
150
Ts
Permissible Pulse Load
Ptotmax/PtotDC = f(tp)
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17.12.96 HL EH PD 21
GaAs FET
CLY 2
________________________________________________________________________________________________________
CLY2 Power GaAs-FET Matching Conditions
Definition:
Measured Data:
Typ f [GHz] 0.9 VDS [V] 3 5 6 5 6 2 3 4 5 6 3 5 ID [mA] 175 175 175 175 175 175 175 175 175 175 175 175 P-1dB [dBm] 22.8 25.8 26.9 25.8 26.9 19.0 22.8 24.5 25.8 26.8 21.5 26.1 Gain [dB] 15.7 16.5 16.9 16.1 16.9 15.0 15.4 15.6 15.7 16.0 13.0 13.0
ms MAG 0.49 0.52 0.50 0.68 0.76 0.75 0.70 0.75 0.72 0.72 0.70 0.67
ms ANG 75 75 76 106 113 130 125 131 131 135 158 152
ml MAG 0.42 0.22 0.21 0.42 0.34 0.52 0.45 0.41 0.38 0.35 0.46 0.36
ml ANG -165 -172 -156 143 139 -171 -172 166 163 155 -179 -178
CLY2
1.5 1.8
2.4
Note: Gain is small signal gain @ ms and ml
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17.12.96 HL EH PD 21

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